Power switching devices are the core of power electronics technology, acting like high-speed, controllable circuit "valves". Through precise control of their own "on" (conducting state with extremely low impedance) and "off" (switching-off state with extremely high impedance) states, they efficiently process and control electrical energy (voltage, current, frequency, etc.) in circuits.
Classification by Device Structure and Development History (A More Technical Perspective)
Traditional Devices (1st Generation)
Silicon Controlled Rectifier (SCR): It is semi-controlled, featuring high voltage withstand capability and large current capacity, but with slow switching speed. It is mainly used in low-frequency, high-power applications such as high-voltage direct current (HVDC) transmission and high-power industrial heating.
Modern Devices (2nd Generation and Beyond)
Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor):
It is a voltage-controlled device with simple driving circuits and low driving power consumption.
It boasts extremely fast switching speed (up to MHz level) and low switching loss.
Disadvantages: The on-resistance increases sharply with the rise of voltage withstand capability, resulting in high conduction loss under high-voltage conditions.
Applications: It is mainly used in medium-low voltage, high-frequency scenarios such as switching power supplies (PC power supplies, mobile phone chargers) and high-frequency inverters.
IGBT (Insulated Gate Bipolar Transistor):
It can be regarded as a hybrid device combining MOSFET and BJT (Bipolar Junction Transistor). It inherits the advantage of voltage-controlled operation (simple driving) from MOSFET, and the advantage of low conduction voltage drop (low conduction loss under high voltage) from BJT.
Its switching speed is between that of MOSFET and SCR.
Disadvantages: It has a current tailing phenomenon, which limits its maximum switching frequency.
Applications: It is the absolute mainstay in the current medium-high voltage, medium-frequency field, such as industrial motor drives, new energy vehicles, variable-frequency home appliances, welding machines, and photovoltaic inverters.
Wide-Bandgap Semiconductor Devices (3rd Generation Semiconductors): This is the current technological frontier, using silicon carbide (SiC) and gallium nitride (GaN) materials.
SiC MOSFET: It has higher voltage withstand capability, much faster switching speed than silicon-based IGBTs, and excellent high-temperature performance. It is mainly used in applications pursuing high efficiency and high power density, such as main drive inverters of new energy vehicles, high-end server power supplies, and rail transit systems.
GaN HEMT (High Electron Mobility Transistor): It has faster switching speed than SiC MOSFET, but relatively lower voltage withstand capability. It is mainly used in ultra-high frequency applications such as fast chargers, 48V conversion in data centers, and radio frequency power amplifiers in 5G base stations.
Main Functions of Power Switching Devices
1. Power Conversion: This is the most basic and core function, including:
Rectification (AC-DC): Converting alternating current into direct current.
Inversion (DC-AC): Converting direct current into alternating current.
DC-DC Conversion: Converting direct current of one voltage level into direct current of another voltage level.
AC-AC Conversion: Changing the voltage or frequency of alternating current.
2. Circuit Control: Realizing smooth regulation of voltage, current or power by controlling the duty cycle (ratio of on-time to cycle) or phase of the switch.
3. Improving Energy Efficiency: An ideal switch has no loss in the on-state and no leakage in the off-state. Modern power devices are very close to this ideal state, thus greatly reducing energy loss during conversion and improving the efficiency of the entire system.
Application Fields: From household appliances (air conditioners, washing machines) and mobile phone chargers to industrial motor drives, new energy vehicles, rail transit, renewable energy (photovoltaic, wind power) power generation systems, and data center power supplies, almost all occasions involving electrical energy processing are inseparable from power switching devices.
| Document Name | Content Description | Attributes | Publication Date |
|---|---|---|---|
| How to select power switching transistors for LLC resonant circuit applications? | LLC converter design steps, how to select power switch tubes | Power switch tubes in LLC circuits, there is nothing better, only fit | 2020/09/15 |
| Basic principles of power MOSFETs | Power device classification, VD MOSFET and SJ MOSFET characteristics and manufacturing process, SiC and GaN MOSFET cell composition | Si MOSFET, SiC/GaN MOSFET unit structures, and Si MOSFET manufacturing process | 2015/07/05 |
| Analysis of Power MOSFET Switching Process and its Impact on EMI | Interpretation of key dynamic parameters of MOSFETs, analysis of switching transient processes, and the impact of peripheral parameters on EMI. | The impact of MOSFET's Cgs, Cgd, Csd, and the addition of external Rg bead core or Csd/Cgd on EMI. | 2015/07/05 |
Address: 177 East Suhong Road, Fangzheng Wisdom Valley, Suzhou Industrial Park
Tel: +86 512-62373510
Fax: +86 512-62373512
E-mail: weixiliu@jypower.cn
Address: Building A5, Huaqiang Creative Industry Park, Guangming District, Shenzhen
Tel: +86 18662166251
E-mail: Stevenshi@jypower.cn
Copyright © Suzhou Jiyuan Electronics Technology Co., Ltd.. All Rights Reserved