Power devices play an extremely critical role in power conversion, motor drive, and AC rectification. The technology has evolved from PN-junction diodes, bipolar junction transistors (BJTs), and silicon-based transistors to the current mass-produced silicon carbide (SiC)-based transistors and gallium nitride (GaN) HEMT products.
An increased bandgap delivers lower switching losses, higher switching frequencies, higher voltage and temperature ratings, as well as smaller device footprints. The elevated switching frequency contributes to the miniaturization of passive components, thus enabling higher power density and more compact system size.
With over 20 years of application experience in discrete and integrated power solutions, we are now developing a full range of devices and solutions that leverage all the advantages of third-generation semiconductors to maximize benefits for our customers.