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HV Power Device
We offer a full range of high-, medium- and low-voltage discrete power devices as well as advanced power module solutions, including IGBTs, MOSFETs, SiC devices and Si/SiC hybrid modules.
Our high-voltage products cover the full voltage range from 500V to 1200V, with specifications boasting a static current of up to 100A and a maximum operating frequency of over 2MHz, which can meet the requirements of various power supply systems. Featuring high efficiency and low temperature rise, these products are particularly suitable for fast chargers, LED power supplies, communication systems, server power supplies, electric vehicle (EV) charging piles and other applications.
Product Applications
P/N Process Package Vds (V) Vgs(V) Id(A)
T=25℃@Vth=10V
Rdson (Ω)
Vth=10V
Von(V)
Vcesat
Manufactory
HRH7N65ANF Si-Planar TO-220F 650 ±30 7 1.4 / HRM Semi
HRH10N65ANB Si-Planar TO-263 650 ±30 10 1 / HRM Semi
HRH10N70ANF Si-Planar TO-220F 700 ±30 10 0.9 / HRM Semi
HRH12N65ANB Si-Planar TO-263 650 ±30 12 0.64 / HRM Semi
HRH7N65AD Si-Planar TO-252 650 ±30 7 1.4 / HRM Semi
RS10N65F Si-Planar TO-220F 650 ±30 10 0.8 / Reasunos
RS16N65F Si-Planar TO-220F 650 ±30 16 0.42 / Reasunos
OSG55R290DF Si-Superjunction TO-252-2L 550 ±30 15 0.29 / Oriental Semi
OSG60R074JT3ZF Si-Superjunction DFN8*8 600 ±20 33 0.074 / Oriental Semi
OSG60R180FF Si-Superjunction TO-220F 600 ±30 20 0.18 / Oriental Semi
OSG65R020HT3F Si-Superjunction TO-247 650 ±30 110 0.02 / Oriental Semi
OSG65R035HF Si-Superjunction TO-247 650 ±30 80 0.037 / Oriental Semi
OSG65R038HZF Si-Superjunction TO-247 650 ±30 80 0.038 / Oriental Semi
OSG65R125FF Si-Superjunction TO-220F 650 ±30 25 0.125 / Oriental Semi
OSG65R125JF Si-Superjunction DFN8*8 650 ±30 25 0.125 / Oriental Semi
OSG65R380DEF Si-Superjunction TO-252 650 ±30 11 0.38 / Oriental Semi
OSG65R380FTF Si-Superjunction TO-220F 650 ±30 11 0.38 / Oriental Semi
OSG65R900FTF Si-Superjunction TO-220F 650 ±30 4.5 0.9 / Oriental Semi
OSG70R360DTF-F Si-Superjunction TO-252 700 ±30 11 0.36 / Oriental Semi
OSG80R250KF Si-Superjunction TO-263 800 ±30 17 0.25 / Oriental Semi
OSG80R650FF Si-Superjunction TO-220F 800 ±30 8 0.65 / Oriental Semi
OSS65R340JF Si-Superjunction PDFN8*8 650 ±30 12 0.34 / Oriental Semi
OST60N65HEMF-D IGBT TO-247A-3L 650 ±20 80 / 1.8 Oriental Semi
OSQ65R045HT2F SiC TO-247 650 -8/22 43 0.045 / Oriental Semi
RSM065020Z SiC TO-247-4 650 -8/22 92 0.02 / Reasunos
RSM120160W SiC TO-247 1200 -8/22 17 0.14 / Reasunos
RSM08180D SiC TO-252 800 -10/22 18 0.18 / Reasunos
RSM065180F SiC TO-220F 650 -10/22 18 0.18 / Reasunos
RSM08380D SiC TO-252 800 -10/22 10 0.38 / Reasunos
OSG60R2K2DF Si-Superjunction TO-252 600 ±30 2 2.2 / Oriental Semi
OSG65R1K4DF Si-Superjunction TO-252 650 ±30 4 1.4 / Oriental Semi
OSG65R900DTF Si-Superjunction TO-252 650 ±30 4.5 0.9 / Oriental Semi
OSG65R380KTF Si-Superjunction TO-263 650 ±30 11 0.38 / Oriental Semi
  • Suzhou
  • Shenzhen
  • Address: 177 East Suhong Road, Fangzheng Wisdom Valley, Suzhou Industrial Park

    Tel: +86 512-62373510

    Fax: +86 512-62373512

    E-mail: weixiliu@jypower.cn

  • Address: Building A5, Huaqiang Creative Industry Park, Guangming District, Shenzhen

    Tel: +86 18662166251

    E-mail: Stevenshi@jypower.cn

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